|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Q62702-A1084 Pin configuration 1 2 3 C A C Package 4 A MW-4 1) Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55...+125 -55...+150 Unit V mA C C VR IF Top Tstg 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A02, 27.02.95 BAR 80 Electrical characteristics at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz Forward resistance Symbol min. Value typ. 0.92 1 0.92 0.5 0.14 max. Unit nA IR 20 VF 1 V pF 0.6 1.6 1.3 0.7 nH - CT f = 100MHz rf Ls IF = 5 mA Series inductance to ground Application information Shunt signal isolation 23 0.15 - dB dB - IF = 10 mA, f = 2 GHz, RG = RL = 50 Shunt insertion loss VR = 5 V, f = 2 GHz, RG = RL = 50 IL Configuration of the shunt-diode -A perfect ground is essential for optimum isolation -The anode pins should be used as passage for RF Semiconductor Group 2 Edition A02, 27.02.95 BAR 80 Forward current IF = f (TS,TA) Forward resistance rf = (IF) f = 100 MHz mA I F TS TA TS TA Dioden capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 Edition A02, 27.02.95 BAR 80 Permissible pulse load RthJS = f (tp) Permissible pulse load IFmax / IFDC = f (tp) K/W R thJS I F max _______ IF DC tp t p Semiconductor Group 4 Edition A02, 27.02.95 |
Price & Availability of BAR80 |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |